Low Temperature Polysilicon Thin-Film Transistors on Flexible Substrates
نویسندگان
چکیده
We fabricated low-temperature polycrystalline silicon thin-film transistors (poly-Si TFTs) on flexible substrates using sputtered amorphous Si (a-Si) precursor films. The a-Si precursor films were deposited by using rf-magnetron sputtering system with argon-helium mixture gas to minimize the argon incorporation into the Si film. The a-Si films were laser annealed by using XeCl excimer laser and a four-maskprocessed poly-Si TFT was fabricated with fully selfaligned top gate structure. The fabricated pMOS TFT showed field-effect mobility up to 63.6 cm/V·s, on/off ratio of 10, and threshold voltage of -1.5 V.
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